Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor
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چکیده
منابع مشابه
High vacuum chemical vapor deposition of cubic SiC thin ž / films on Si 001 substrates using single source precursor
Ž . Thin films of cubic SiC have been prepared on Si 001 substrates in situ by high vacuum metal-organic chemical vapor Ž . deposition HVMO-CVD method using a single source precursor at various growth temperatures in the range of 300]10008C. Ž . 1,3-Disilabutane, H Si-CH -SiH -CH DSB that contains the same amount of silicon and carbon atoms in the same molecule 3 2 2 3 Ž . was used as precursor...
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ژورنال
عنوان ژورنال: Chemistry of Materials
سال: 2015
ISSN: 0897-4756,1520-5002
DOI: 10.1021/acs.chemmater.5b03220